Diamond Field Effect Transistors
نویسندگان
چکیده
High-quality single crystal diamond has been used to demonstrate the RF performance of hydrogenterminated diamond field effect transistors of varying gate lengths; this includes the first data on a sub100nm diamond transistor. The RF performance for 220nm, 120nm and 50nm gate length transistors was extracted and a cut-off frequency of 55 GHz was measured for the 50nm device. This is the highest value yet reported for any diamond based transistor. This significant increase can be attributed to the quality of the material, improved diamond growth techniques and device scaling.
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